| 摘要 |
A solid-state imaging device includes, on a semiconductor substrate, a pixel portion having a plurality of pixels provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain a signal charge and a pixel transistor portion, which converts the signal charge read from the photoelectric conversion portion to a voltage, wherein an element isolation region disposed in the pixel portion includes an insulating film buried in a trench disposed in the semiconductor substrate, and the insulating film includes an insulating film having a negative charge.
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