| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and a device for evaluating a semiconductor wafer, which highly accurately evaluate the BMD (Bulk Micro Defect) density distribution by obtaining the BMD density over the entire surface of the semiconductor wafer in a short time period for impurity analysis of a silicon substrate. Ž<P>SOLUTION: In the method of evaluating the density of BMD in the semiconductor wafer, the ferro-excited micro PL (Photo Luminescence) value over the entire surface of the semiconductor wafer is measured, then, the BMD densities at a plurality of in-plane positions of the semiconductor wafer are measured, a relational expression between the ferro-excited micro PL value and the BMD density at the same position of the semiconductor wafer is obtained, and the BMD density over the entire surface of the semiconductor wafer is numerically expressed from the obtained relational expression using the ferro-excited micro PL value over the entire surface of the semiconductor wafer to evaluate the BMD density distribution. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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