SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can cope with both the static breakdown voltage increase and the ON resistance reduction, and a method of manufacturing the same. Ž

SOLUTION: An N--type first drain offset region 112, an N--type second drain offset region 113, and an N--type third drain offset region 114 are formed in a P-type semiconductor substrate 111 in this order from the lower. A P--type body region 115 is formed in the second and third drain offset regions 113 and 114. The impurity concentration of the second drain offset region 113 is lower than those of the first and third drain offset regions 112 and 114. A curvature part 131 of the body region 115 is located in the second drain offset region 113. Ž

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