| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which scratches on a substrate reverse surface are reduced by eliminating production of particles at contact portions of a port column and the substrate. Ž<P>SOLUTION: The method of manufacturing the semiconductor device includes a substrate carrying-in step of carrying a plurality of substrates held by a substrate holding means into a processing chamber, a pressure lowering step of lowering the pressure in the processing chamber, a substrate processing step of introducing a processing gas into the processing chamber in a state wherein the substrate holding means is rotated to process the substrate, and a pressure raising step of raising the pressure in the processing chamber, the substrate holding means being stopped from rotating after the pressure in the processing chamber is raised up to predetermined pressure in the pressure raising step. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
