发明名称 |
GAN-BASED FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A GaN-based field effect transistor 101 comprises: a substrate 101; a channel layer 104 comprised of p-type GaN-based semiconductor material formed on the substrate 101; an electron supplying layer 106 formed on said channel layer 104 and comprised of GaN-based semiconductor material which has band gap energy greater than that of said channel layer 104; a gate insulating film 111 formed on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; a gate electrode 112 formed on said gate insulating film; a source electrode 109 and a drain electrode 110 formed so that said gate electrode 112 positions in between them; and a second insulating film 113 formed on said electron supplying layer, which is a different insulating film from said gate insulating film 111 and has electron collapse decreasing effect.
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申请公布号 |
US2010127275(A1) |
申请公布日期 |
2010.05.27 |
申请号 |
US20090625579 |
申请日期 |
2009.11.25 |
申请人 |
FURUKAWA ELECTRIC CO., LTD. |
发明人 |
TAKEHIKO NOMURA;YOSHIHIRO SATO;HIROSHI KAMBAYASHI;SHUSUKE KAYA;MASAYUKI IWAMI;SADAHIRO KATO |
分类号 |
H01L29/786;H01L21/336;H01L29/205 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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