发明名称 METHOD AND STRUCTURE FOR THIN FILM PHOTOVOLTAIC CELL USING SIMILAR MATERIAL JUNCTION
摘要 <p>A method for forming a thin film photovoltaic device. The method provides a transparent substrate including a surface region. A first electrode layer overlies the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. At least the multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a bulk copper indium disulfide. The bulk copper indium disulfide material has a surface region characterized by a copper poor surface region having a copper to indium atomic ratio ofless than about 0.95:1 and n-type impurity characteristics. The bulk copper indium disulfide material excluding the copper poor surface region fonns an absorber region and the copper poor surface region fonns at least a portion of a window region for the thin film photovoltaic device.</p>
申请公布号 WO2010059950(A1) 申请公布日期 2010.05.27
申请号 WO2009US65351 申请日期 2009.11.20
申请人 STION CORPORATION;LEE, HOWARD W.H. 发明人 LEE, HOWARD W.H.
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
地址
您可能感兴趣的专利