| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device reading and transferring data and threshold voltage information from a memory cell array at a high rate. <P>SOLUTION: The semiconductor storage device includes: a sense amplifier 3a which reads data and threshold voltage information, data latches DL0-DL2 which hold data and threshold voltage information, and a data latch DLX which holds and outputs data and threshold voltage information to the outside. The sense amplifier 3a simultaneously reads data and threshold voltage information through a series of voltage application to word lines connected to memory cells. A control circuit 6 controls the read operations so that one of data and threshold information having been completely read is output from the data latch DLX, and the other one being read is read from the memory cell array and stored into the data latches DL0-DL2. <P>COPYRIGHT: (C)2010,JPO&INPIT |
