| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes emission efficiency by securing the maximum light emitting area, enables uniform current distribution using an electrode with a small area, and enables mass production with high reliability and high quality. <P>SOLUTION: The semiconductor light-emitting element 100 includes semiconductor layers 130, 110 of first conduction type and second conduction type and an active layer between them, as well as a first electrode layer and a second electrode portion electrically connected to each semiconductor layer. The second electrode portion includes an electrode pad portion, electrode extension portion, and electrode interconnecting portion that connects the electrode pad portion and electrode extension portion. <P>COPYRIGHT: (C)2010,JPO&INPIT |
