| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflection type mask having high pattern transfer precision. <P>SOLUTION: The reflection type mask has: a substrate; a multilayer film formed on one surface of the substrate; an intermediate layer formed on the multilayer film; and an absorption layer formed on the intermediate layer, wherein the absorption layer has an absorber transfer pattern region where an absorber transfer pattern is formed, the absorber transfer pattern being formed by partially removing the absorption layer, has a light shield frame where the substrate is exposed, the light shield frame being formed at at least a part of an outer periphery of the absorber transfer pattern region and being formed by removing the multilayer film, intermediate layer, and absorption layer, and further has a protective oxide film having resistance to cleaning using a cleaning chemical, formed only on a side surface where the multilayer film is exposed in the light shield frame. <P>COPYRIGHT: (C)2010,JPO&INPIT |
