发明名称 ION IMPLANTATION APPARATUS
摘要 PROBLEM TO BE SOLVED: To suppress the occurrence of particles due to contact of a semiconductor wafer and a chuck pin. SOLUTION: The chuck mechanism of the ion implantation apparatus includes: a spindle 42 erected axisymmetrically to a line (symmetry axis 40) connecting the center of a rotating body and the center of the semiconductor wafer on a surface on the opposite side of the surface of a support board where the semiconductor wafer 28 is to be mounted; a link member 44 which is provided turnably around the spindle and includes one end part projecting to the outer side from the peripheral edge part on the inner peripheral side of the semiconductor wafer; the chuck pin 46 erected in the direction of the semiconductor wafer from one end part of the link member; and a chuck spring 48 for turning the link member clockwise. For the link member, a counter weight 52 for making a centrifugal force accompanying the rotation of the rotating body act in the direction of obstructing turning by the chuck spring is attachable and detachable, and the centrifugal force is adjusted by making the weight of the counter weight different. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010118459(A) 申请公布日期 2010.05.27
申请号 JP20080290059 申请日期 2008.11.12
申请人 SUMCO CORP 发明人 KANAMARU TETSUSHI;KASAMATSU TAKAAKI;NONOGAKI YOSHIHISA
分类号 H01L21/683;H01J37/317;H01L21/265 主分类号 H01L21/683
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