| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device effectively improved in drive force by using a distortion silicon technique. Ž<P>SOLUTION: The semiconductor device includes: a semiconductor layer formed on a semiconductor substrate; a transistor having a source-drain region and a channel region in the semiconductor layer; and an insulating film formed on a lower side of the channel region between the semiconductor substrate and the semiconductor layer, and including stress generating distortion in the channel region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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