发明名称 |
DEVELOPMENT METHOD, METHOD OF MANUFACTURING PHOTOMASK, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND DEVELOPMENT DEVICE |
摘要 |
A development method according to an embodiment includes exposing a photosensitive film formed on a substrate at a predetermined exposure amount, carrying out a first development process that develops the exposed photosensitive film at a predetermined first development condition so as to leave the photosensitive film, obtaining a sensitivity information of the photosensitive film from a film thickness reduction of the photosensitive film developed by the first development process and the exposure amount, predicting pattern dimensions of multiple types of patterns to be formed when a second development process is carried out following the first development process from the sensitivity information, and determining a first acceptable range of a development condition in the second development process, determining a second acceptable range of the development condition in the second development process from the first acceptable range and a variation amount of the pattern dimension after the development process between the multiple types of patterns and determining a second development condition in the second development process so as to satisfy both of the first and second acceptable ranges.
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申请公布号 |
US2010129737(A1) |
申请公布日期 |
2010.05.27 |
申请号 |
US20090559735 |
申请日期 |
2009.09.15 |
申请人 |
SAKURAI HIDEAKI;TERAYAMA MASATOSHI |
发明人 |
SAKURAI HIDEAKI;TERAYAMA MASATOSHI |
分类号 |
G03C5/00;G03F1/68;G03F1/80;G03F1/82;G03F7/30;H01L21/00;H01L21/027 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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