| 摘要 |
A nitride semiconductor of high quality is provided which, when produced as a light-emitting element, has a high luminescent efficiency. The nitride semiconductor comprises, superposed in the following order, a nitride semiconductor part of one conduction type, a quantum well active-layer structure part, and a nitride semiconductor part of another conduction type, which is opposite to the former conduction type. When this nitride semiconductor is obtained, crystals are grown on a substrate having a main surface constituted of a nonpolar nitride. The nitride semiconductor part of the former conduction type is formed by superposing a first nitride semiconductor layer and a second nitride semiconductor layer in this order, and the second nitride semiconductor layer is deposited in a thickness of from 400 nm to 20 µm so as to have a nonpolar outermost surface. By selecting the substrate for crystal growth, the electrons and holes which contribute to luminescence based on the QCSE are inhibited from being spatially separated, and efficient radiation is rendered possible. By regulating the second nitride semiconductor layer so as to have the proper thickness, the nitride semiconductor is prevented from having a considerably rough surface. |
