HALBLEITERSTRUKTUR MIT EINEM ODER MEHREREN DURCHGANGSLÖCHERN

摘要

Double-sided etching techniques are disclosed for providing a semiconductor structure with one or more through-holes. The through-holes may be sealed hermetically such as by a feed-through metallization process. The feed-through metallization process may include using an electroplating technique and may provide electrical contact to an opto-electronic or integrated circuit encapsulated in a package with the semiconductor structure used as a lid.