| 摘要 |
FIELD: electricity. ^ SUBSTANCE: hybrid integrated microwave circuit includes dielectric substrate on the front side of which there located is topological metallisation pattern, and on rear side - screen earthing metallisation, at least one metallised mounting platform connected to screen earthing metallisation, at least one transistor, at least two capacitors on both sides of transistor. At that, at least one of the transistor outputs is electrically connected to upper coatings of capacitors, at least two other outputs are electrically connected to topological metallisation pattern, lower coatings of capacitors are electrically connected to metallised mounting platform and through it to screen earthing metallisation. Transistor with outputs, two capacitors and electric connections of one of transistor outputs to upper coatings of capacitors are made in the form of at least one crystal of monolithic integrated circuit, which is located on one metallised mounting platform. At that, both capacitors are film-type, upper coatings of capacitors, outputs of transistor and electric connections of one of transistor outputs with upper coatings of capacitors are provided in one metallisation layer of crystal of monolithic integrated circuit. At that, in crystal of monolithic integrated circuit immediately under lower coatings of capacitors there made are through metallised holes for electric connection of lower coatings of capacitors with metallised mounting platform. ^ EFFECT: improving electrical and mass and dimensions characteristics, improving reliability, reducing labour input of manufacturing process. ^ 6 cl, 3 dwg, 3 ex |
