| 发明名称 |
BASE FOR A NPN BIPOLAR TRANSISTOR |
| 摘要 |
An improved base for a NPN bipolar transistor. The base region is formed with Boron and Indium dopants for improved beta early voltage product and reduced base resistance.
|
| 申请公布号 |
US2010129975(A1) |
申请公布日期 |
2010.05.27 |
| 申请号 |
US20100697858 |
申请日期 |
2010.02.01 |
| 申请人 |
INTERSIL AMERICAS INC. |
发明人 |
BEASOM JAMES D. |
| 分类号 |
H01L21/331;H01L21/22;H01L29/10;H01L29/167;H01L29/732;H01L29/735 |
主分类号 |
H01L21/331 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
