| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a conventional semiconductor laser device is low in electric conversion efficiency. SOLUTION: The semiconductor laser device is allowed to have three or more modes in a crystal growth direction. The semiconductor laser device has a plurality of active layers. The active layers are arranged nearby a position where an electric field of a specified higher mode has an extremal value, respectively. Consequently, only the specified higher mode is selected to enhance a light confinement rate. Consequently, in the semiconductor laser device, its threshold current is reduced to enhance an electric conversion efficiency. COPYRIGHT: (C)2010,JPO&INPIT
|
