| 摘要 |
A semiconductor device may include a semiconductor substrate, a salicide, a gate electrode, and an insulating layer. The semiconductor substrate has a lightly doped drain (LDD) region formed therein. The salicide is formed on the LDD region. The gate electrode is formed on the semiconductor substrate. The gate electrode has a stacked structure of a gate oxide and a metal layer. The insulating layer is formed on the semiconductor substrate and at a side of the gate electrode.
|
