发明名称 BOTTOM UP PLATING BY ORGANIC SURFACE PASSIVATION AND DIFFERENTIAL PLATING RETARDATION
摘要 Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.
申请公布号 US2010130007(A1) 申请公布日期 2010.05.27
申请号 US20090620818 申请日期 2009.11.18
申请人 APPLIED MATERIALS, INC. 发明人 WANG JENN-YUE;CHUNG HUA;TAO RONG;ZHANG HONG
分类号 H01L21/3205 主分类号 H01L21/3205
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