发明名称 SEMICONDUCTOR LAYER AND METHOD FOR FORMING SAME
摘要 <p>A semiconductor layer (100) includes an upper surface (100o), a lower surface (100u), and a side surface (100s).  In the vicinity of the boundary between the side surface (100s) and the upper surface (100o) on the side surface (100s), the tangent (T1) of the boundary is inclined with respect to the normal of the lower surface (100u).  At a portion of the side surface (100s) apart from the upper surface (100o) as compared to the vicinity of the boundary, the angle defined by the tangent (T2) of that portion and the plane defined by the lower surface (100u) is greater than the angle defined by the tangent (T1) in the vicinity of the boundary and the plane defined by the lower surface (100u).</p>
申请公布号 WO2010058528(A1) 申请公布日期 2010.05.27
申请号 WO2009JP05824 申请日期 2009.11.02
申请人 SHARP KABUSHIKI KAISHA;FURUKAWA, HIROAKI 发明人 FURUKAWA, HIROAKI
分类号 H01L29/786;H01L21/3065;H01L21/336 主分类号 H01L29/786
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