| 摘要 |
PURPOSE: A nonvolatile memory device is provided to improve the throughput of program operation by reducing the iteration number of the program operation and verification operation in an ISPP(Incremental Step Pulse Program) program method. CONSTITUTION: A nonvolatile memory device comprises a bit line voltage supplying part(590) and a bit line voltage setting part(580). The bit line voltage supplying part supplies a power voltage, a voltage which is subtracted as much as a second reference voltage from a third reference voltage, or a voltage which is subtracted as much as a first reference voltage from the third reference voltage according to a first latch part(540), a second latch part(550), and data stored in a third latch part(560). The bit line voltage setting part transmits 0V voltage to the bit line according to data saved in the first, the second, and the third latch part. The bit line voltage setting part transfers the output voltage of the bit line voltage supplying part to the bit line.
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