| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device high in operation reliability. <P>SOLUTION: A stack, where a plurality of insulating films and electrode films 14 are respectively and alternately stacked, is arranged on a silicon substrate 11. The electrode films 14 are divided into a plurality of control gate electrodes CG extending in an X-direction. In the stack, U shape pillars 30 are arranged, penetrating selection gate electrodes SGb, SGs and the control gate electrodes CG1-CG4 with one ends connected to a source line SL and the other ends connected to a bit line BL. Potential is applied to the control gate electrode CG4 being the uppermost layer, which is different from those of the other control gate electrodes CG1-CG3. <P>COPYRIGHT: (C)2010,JPO&INPIT |
