| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an image sensor that can avoid problems of a decrease in saturation, a decrease in sensitivity, etc. Ž<P>SOLUTION: The method of manufacturing the image sensor includes a step of forming an inter-layer insulating layer 160 including a wiring 150 on a semiconductor substrate 100; a step of forming a via hole through the interlayer insulating layer 160 to expose the wiring 150 by performing an etching process to the semiconductor substrate 100; a step of performing a first cleaning process and a second cleaning process to the semiconductor substrate including the via hole; a step of forming a contact plug by filing a metal material in the via hole; and a step of forming an image sensing portion having a first doped layer and a second doped layer, laminated on the interlayer insulating layer 160 including the wiring 150 and the contact plug, wherein the first and second cleaning processes include removing residues formed at a sidewall of the via hole through the etching process. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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