| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration in current capacity of a power recovery switch. SOLUTION: In the power recovery switch 1, a PchFET 1a and an NchFET 1b are connected in series. Further, the PchFET 1a and the NchFET 1b are simultaneously turned on/off. At the rising of an output, a GND potential is applied to the source electrode of the NchFET 1b connected to an output terminal 4, and a VDH potential is applied to the gate electrode of the NchFET 1b, then, a gate-to-source voltage is set as VDH at an initial stage. At the falling of the output, the source electrode of the PchFET 1a has the VDH potential and the gate electrode has the GND potential at the initial stage, then, the gate-to-source voltage is set as VDH at the initial stage. In any of the rising and falling of the output, VDH is applied between the gate and the source at the initial stage, so that the maximum current capacity of the FET can be obtained. COPYRIGHT: (C)2010,JPO&INPIT
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