发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE UNCONSTRAINED BY OPTICAL LIMIT AND APPARATUS OF FABRICATING THE SEMICONDUCTOR DEVICE |
摘要 |
Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.
|
申请公布号 |
US2010130010(A1) |
申请公布日期 |
2010.05.27 |
申请号 |
US20090538080 |
申请日期 |
2009.08.07 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
PARK SAHNGGI;KIM KAP-JOONG;KIM IN-GYOO;KIM GYUNGOCK |
分类号 |
H01L21/308;G01B11/27 |
主分类号 |
H01L21/308 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|