| 摘要 |
The disclosure provides mixed acid solutions for cleaning a vessel, such as a vessel used for growing a GaAs crystal, comprising nitric acid, hydrofluoric acid and water. Further, the disclosure also provides exemplary methods for cleaning a vessel for growing a GaAs crystal, by: a) immersing the vessel in a mixed acid solution; b) immersing the vessel in an ammonia solution; c) cleansing the vessel with a surfactant solution under supersonic vibration; and d) cleansing the vessel with deionized water under supersonic vibration.
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