| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress an increase of the number of steps or the like in a method for manufacturing a semiconductor device which performs gate processing by carrying out exposure processing for a plurality of times. <P>SOLUTION: A method of manufacturing a semiconductor device forms at least one pair of gate electrodes having end portions opposed to each other across a gap. The method includes forming a gate insulator (112) and a gate electrode layer (113x) on a substrate (111) in order, forming a first anti-reflection coating (201) and a first resist (202) on the gate electrode layer in order, exposing and developing the first resist, etching the gate electrode layer, using the first resist or the first anti-reflection coating as a mask, to remove the gate electrode layer from a region for forming the gap, thereby forming a hole (121) penetrating the gate electrode layer, forming a second anti-reflection coating (301) and a second resist (302) on the gate electrode layer where the hole has been formed, in order, exposing and developing the second resist, and etching the gate electrode layer, using the second resist (302) or the second anti-reflection coating (301) as a mask, to form, from the gate electrode layer, the at least one pair of gate electrodes (113) having the end portions opposed to each other across the gap. <P>COPYRIGHT: (C)2010,JPO&INPIT |
