| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a small-sized semiconductor device which can be made conductive in both forward and backward directions (can be switched for conductive direction). Ž<P>SOLUTION: The semiconductor device includes a first region 30 of the first conductivity type, a second region 32 of the second conductivity type in contact with the first region 30, a third region 36 of the first conductivity type separated from the first region by the second region 32, a fourth region 22 of the second conductivity type separated from the second region 32 by the third region 36, a fifth region 20 of the first conductivity type separated from the third region 36 by the fourth region 22, a first electrode 56 conductive to the first region 30 and the second region 34, a second electrode 54 conductive to the fourth region 22 and the fifth region 20, a first gate electrode 44 opposed to the second region 32 via an insulating film 42, and a second gate electrode 52 opposed to the fourth region 22 via an insulating film 50. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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