| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor such that the thickness of a gate insulating layer is easily made thick and semiconductor characteristics of a channel layer region are prevented from deteriorating caused by the influence of the gate insulating layer. Ž<P>SOLUTION: A source electrode 5 and a drain electrode 6 are formed at an interval on a substrate 1, and a semiconductor layer 4 is formed of an oxide semiconductor layer on those source electrode 5, drain electrode 6, and substrate 1. On the semiconductor layer 4, an insulating layer 3 is formed of an organic insulating layer and on the insulating layer 3, a gate electrode 2 is formed to obtain the thin-film transistor 10 having a top gate structure. The organic insulating layer is formed after the oxide semiconductor layer is formed so as to prevent deterioration in semiconductor characteristics due to mixing of an organic substance in the organic insulating layer with the oxide semiconductor during the formation of the oxide semiconductor layer. The organic insulating layer is made thicker than the metal oxide insulating layer to improve electric endurance characteristics very easily. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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