METHOD OF AT LEAST PARTIALLY RELEASING AN EPITAXIAL LAYER
摘要
<p>A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.</p>
申请公布号
WO2010059131(A1)
申请公布日期
2010.05.27
申请号
WO2009SG00435
申请日期
2009.11.19
申请人
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;ZANG, KEYAN;TENG, JINGHUA;CHUA, SOO JIN