| 发明名称 |
GALLATE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, PIEZOELECTRIC DEVICE FOR HIGH-TEMPERATURE USE AND PIEZOELECTRIC SENSOR FOR HIGH-TEMPERATURE USE |
| 摘要 |
<p>It is an object of the present invention to provide a material for a piezoelectric device used at a high temperature zone, which can be used at the high temperature zone exceeding 400°C and has a resistivity whose temperature dependence is low. The material is characterized by having a composition selected from the group consisting of RE 3 Ga 5-x Al x SiO 14 (wherein RE represents a rare earth, and 0<x<5), RE 3 Ta 0.5 Ga 5.5-x Al x O 14 (wherein RE represents a rare earth, and 0<x<5.5) and RE 3 Nb 0.5 Ga 5.5-x Al x O 14 (wherein RE represents a rare earth, and 0<x<5.5), and characterized in that a resistivity change at the temperature zone of 100 to 600°C is 10 4 or less. The material is characterized by being produced by growing a single crystal from a solution in an atmosphere of inert gas containing an oxidative gas, and subsequently cooling the single crystal with lowering a molar fraction (z) of the oxidative gas in the inert gas below a molar fraction of the oxidative gas in the growing step.</p> |
| 申请公布号 |
EP1867761(A4) |
申请公布日期 |
2010.05.26 |
| 申请号 |
EP20060730692 |
申请日期 |
2006.03.30 |
| 申请人 |
FUKUDA CRYSTAL LABORATORY |
发明人 |
FUKUDA, TSUGUO;YOSHIKAWA, AKIRA;SATO, HIROKI |
| 分类号 |
C30B29/34;H01L41/18;H01L41/24 |
主分类号 |
C30B29/34 |
| 代理机构 |
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