PURPOSE: A method for manufacturing a solar cell is provided to improve contact efficiency of an electrode and a P layer by thermally processing copper and gallium alloy and indium with hydrogen selenide after depositing the copper and gallium alloy and indium with a sputtering method. CONSTITUTION: A first electrode(110) is formed on a substrate(100). A P layer is formed on a first electrode. An N layer is formed on the P layer. A second electrode is formed on the N layer. A first layer(121) is formed on the first electrode with an evaporation deposition method. A second layer is formed on the first layer with a sputtering method. A substrate including a thin film structure is thermally processed at a high temperature.
申请公布号
KR20100055153(A)
申请公布日期
2010.05.26
申请号
KR20080114095
申请日期
2008.11.17
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
JUN, GUG IL;LEE, WOO SU;KIM, DONG SEOP;KIM, JIN SEOCK;KIM, BYOUNG DONG;LEE, KANG HEE;AHN, DONG GI;LEE, BYUNG JOO;PARK, HYOUNG JIN;KIM, IN KI