| 摘要 |
<p>The disclosure relates to measuring an undercut of a feature on a specimen using a scanning electron microscope (SEM). In accordance with one embodiment, a method for measuring the undercut includes illuminating the feature with a primary electron beam at an incident angle, changing the incident angle of the primary electron beam over a set of angles, measuring an intensity of scattered electrons from the feature for each incident angle in the set of angles, and determining a discontinuity in the intensities as a function of the incident angle.</p> |
