| 摘要 |
PROBLEM TO BE SOLVED: To provide a production process of recrystallized SiC, by which a high purity recrystallized SiC sintered body having good properties with respect to forming, excellent oxidation resistance, superior corrosion resistance and high thermal conductivity, can be produced. SOLUTION: This production process comprises: adding 1-12 wt.%, on the outer percentage basis, of clay to an SiC raw material containing >=10 wt.% of fine grains having <=5 μm grain size and mixing them together to obtain a mixture; forming the mixture into a green body having a desired shape; and sintering the green body in an inert atmosphere at >=2,000 deg.C to produce the objective recrystallized SiC. |
