发明名称 |
REDUCED RESIDUAL FORMATION IN ETCHED MULTI-LAYER STACKS |
摘要 |
<p>A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.</p> |
申请公布号 |
EP2188831(A1) |
申请公布日期 |
2010.05.26 |
申请号 |
EP20080795566 |
申请日期 |
2008.08.25 |
申请人 |
MOLECULAR IMPRINTS, INC. |
发明人 |
XU, FRANK, Y.;LIU, WEIJUN;BROOKS, CYNTHIA, B.;LABRAKE, DWAYNE, L.;LENTZ, DAVID., J. |
分类号 |
H01L21/302;B82Y10/00;B82Y40/00;G03F7/00;G03F7/027;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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