发明名称 |
FUNCTIONAL DEVICES USING SINGLE CRYSTAL MATERIAL HAVING HIGH DENSITY DISLOCATIONS ARRANGED ONE-DIMENSIONALLY IN STRAIGHT LINE FORM AND METHOD FOR THEIR PREPARATION |
摘要 |
Disclosed is a ceramic or metal single-crystal material having high-density dislocations arranged one-dimensionally on respective straight lines. The single-crystal material is produced by compressing a ceramic or metal single-crystal blank at a high temperature from a direction allowing the activation of a single slip to induce plastic deformation therein, and then subjecting the resulting product to a heat treatment. The single-crystal material can be used in a device for high-speed dislocation-pipe diffusion of ions or electrons. The single-crystal material can further be subjected to a diffusion treatment so as to diffuse a metal element from its surface along the dislocations to provide a single-crystal device with a specific electrical conductivity or a quantum wire device. Otherwise, the single-crystal material can be subjected to annealing or chemical etching so as to form nano-holes along the high-density dislocations to provide a thin film device, such as a molecular sieve film or a carbon-dioxide separating film. <IMAGE> |
申请公布号 |
EP1500722(B1) |
申请公布日期 |
2010.05.26 |
申请号 |
EP20030717672 |
申请日期 |
2003.04.21 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
IKUHARA, YUICHI;YAMAMOTO, TAKAHISA |
分类号 |
C30B29/16;C30B1/12;C30B29/20;C30B33/00;H01L29/06;H01L29/32 |
主分类号 |
C30B29/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|