SOLID-STATE IMAGING ELEMENT

摘要

It is an object of the present invention to provide an image sensor having a high ratio of a surface area of a light receiving element to a surface area of one pixel. The above-described object is achieved by an inventive solid-state imaging device unit comprising solid-state imaging devices arranged on a substrate according to the present invention,
the solid-state imaging device comprising:
a signal line formed on the substrate;
an island shaped semiconductor placed over the signal line; and
a pixel selection line connected to an upper portion of the island shaped semiconductor,
the island shaped semiconductor comprising:
a first semiconductor layer disposed in a lower portion of the island shaped semiconductor and connected to the signal line;
a second semiconductor layer disposed adjacent to an upper side of the first semiconductor layer;
a gate connected to the second semiconductor layer via an insulating film;
an electric charge accumulator comprising a third semiconductor layer connected to the second semiconductor layer and carrying a quantity of electric charges which varies in response to a light reception; and
a fourth semiconductor layer disposed adjacent to an upper side of the second semiconductor layer and the third semiconductor layer and connected to the pixel selection line, wherein
the solid-state imaging devices are arranged on the substrate in a honeycomb configuration.