| 摘要 |
<p>A semiconductor light emitting device (100) is provided. The semiconductor light emitting device (100) comprises a conductive supporting member (103), an N-type semiconductor layer (110) on the conductive supporting member (103); an active layer (120) on the N-type semiconductor layer (110), a P-type semiconductor layer (130) on the active layer (120), an ohmic contact layer (140) on the P-type semiconductor layer (130), and an electrode (160) on the ohmic contact layer (140).</p> |
