| 摘要 |
<p>PURPOSE: A method for manufacturing a nonvolatile memory device is provided to prevent a step between the cell region and the peripheral region by etching a scribe region with the peripheral region. CONSTITUTION: A peripheral circuit region and a scribe region of a substrate(20) are etched with a preset depth. A tunnel insulation layer, a charge trap layer and a sacrificial layer are formed on the substrate on which a peripheral circuit region and a scribe region are etched with the preset depth. A device isolation layer is formed on the substrate on which the tunnel insulation layer, the charge trap layer, and the sacrificial layer are formed. An EFH(Effective Field oxide Height) of the peripheral circuit region is adjusted using a mask pattern(21) to expose the peripheral circuit region. The EFH of the cell region is controlled using the mask pattern to expose the cell region.</p> |
