| 摘要 |
<p>The diode (100) has a vertical-cavity surface-emitting laser resonator provided with an active zone (40) embedded in N-doped confinement layers (30), P-doped confinement layer (50), tunnel contact layer (60) and power supply layer (70). A periodic structure (80) is made of semiconducting material and dielectric material (90a). A main extension level of the structure is arranged perpendicular to a radiation direction (A). The structure is found in direct contact to N-doped confinement layer, the supply layer, and to one of N-doped epitaxial bragg-mirrors (20) or dielectric bragg-mirrors (90). The periodic structure is designed as an optical grating or a sub-wavelength grating. The structure is attached on a decoupling mirror on the outer side. An independent claim is also included for a method for manufacturing the semiconductor laser diode.</p> |
