| 摘要 |
<p>PURPOSE: A method for manufacturing a reticle for a semiconductor is provided to form an auxiliary pattern through a sizing process by automatically considering the distance and the thickness of the auxiliary pattern in a generation step. CONSTITUTION: A layer is formed with a Boolean operation process. A dummy pattern of a square shape including a line pattern(100) is defined. Two overlap patterns with a square shape are defined. Two outer patterns are defined in contact with the outer side of the dummy pattern. An auxiliary pattern(500) is formed on both sides of a line pattern by down-sizing the dummy pattern, the overlap pattern and the outer pattern with 1/2 to 3/4 of the width of the overlap pattern. An auxiliary pattern completed with the sizing process and the layer data are converted into a file type inputted to an electron scan device.</p> |
