| 摘要 |
<p>PURPOSE: A flash memory cell, a reading method thereof, and a manufacturing method thereof are provided to improve a reading speed by performing a reading operation when a gate is not turned on. CONSTITUTION: An active area of the substrate is defined by a device isolation layer. A tunneling insulation layer(12) is formed on the substrate. A P type floating gate, a dielectric layer, and a control gate(CG) are stacked on the tunneling insulation layer of the upper side of the active region. An N type drain(18) and an N type source are formed on the upper side of the tunneling insulation layer of the upper side of the device isolation layer and are separated based on the P type floating gate.</p> |
