| 摘要 |
PURPOSE: A high voltage transistor and a high voltage switch circuit are provided to increase the area of a gate electrode by increasing the area of an active area. CONSTITUTION: A high voltage switch circuit comprises an active area(300) and a gate line(310). The active area comprises a plurality of a first active area(300A) and a second active area(300B) connecting the adjacent first active area. A high voltage transistor is formed on each first active area. The second active area connects the adjacent first active areas which are adjacent between the first active areas. The second active area increases junction capacitance value by increasing the area of the gate electrode. A width(W1) of the second active area is equal to or less than the width(W2) of the gate line. The gate line is extended across the center of the active area. |
