| 摘要 |
PURPOSE: A semiconductor light emitting device and a fabrication method thereof are provided improve the efficiency of light extraction by forming an uneven electrode. CONSTITUTION: A semiconductor light emitting device(100) comprises light emitting structures(110, 120, 130) and an electrode layer(150). The light emitting structure has the unevenness pattern(135). The electrode layer is formed on the unevenness pattern of the light emitting structure into an uneven pattern shape. |
