发明名称 |
Process for manufacturing a slot waveguide |
摘要 |
<p>The method involves forming non stoichiometric silicon oxide layer on an etch stop layer (22) that is made of silicon dioxide or silicon, and is superficial layer of silicon on insulator. Two trenches parallel to each other are graved on the etch stop layer with the help of a hard mask that is made of a metal or resin, where the trenches are separated by a silicon oxide wall (36). The trenches are filled with amorphous, polycrystalline or monocrystalline silicon (42, 44). An annealing of the silicon oxide layer is carried out after performing formation, graving or filling steps.</p> |
申请公布号 |
EP1918744(B1) |
申请公布日期 |
2010.05.26 |
申请号 |
EP20070119452 |
申请日期 |
2007.10.29 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
JORDANA, EMMANUEL;FEDELI, JEAN-MARC;EL MELHAOUI, LOUBNA |
分类号 |
G02B6/122 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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