发明名称 |
Semiconductor memory devices and method for preventing mismatch of reference signals in data sending |
摘要 |
Semiconductor memory devices and a method thereof are provided. An example semiconductor memory device may include a control signal generation unit configured to generate a plurality of control signals in response to a bias current, a reference current generation unit configured to generate a reference current in response to the plurality of control signals and a sense amplifier configured to sense and amplify data stored in a given memory cell based on the reference current and a current on a bit line connected to the memory cell. Another example semiconductor memory device may include a memory bank including a plurality of memory cells and a sense amplifier bank including a plurality of sense amplifier units sharing a common line, each of the sense amplifier units including a current source configured to form a current path between the common line and a first voltage supply in response to an enable signal and a gating signal and a sense amplifier configured to sense and amplify data stored in a corresponding memory cell among the plurality of memory cells based on a signal on a bit line connected with the corresponding memory cell and a signal on the common line.
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申请公布号 |
US7724579(B2) |
申请公布日期 |
2010.05.25 |
申请号 |
US20070892461 |
申请日期 |
2007.08.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SANG-KUG;KIM DAE-HAN |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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