| 摘要 |
<p>PURPOSE: A method of manufacturing a gate pattern for flash memory device is provided to improve a signal channel effect by forming the bottom of the floating gate in the gate trench. CONSTITUTION: In a method of manufacturing a gate pattern for flash memory device, a gate trench mask is formed on a semiconductor substrate(101). A spacer(105) is formed on the both side walls of the gate trench mask. The gate trench is formed on the semiconductor substrate by etching the semiconductor substrate. A floating gate(111a) is formed between a gate trench mask between neighboring spacers. A dielectric film is formed at an upper part of the floating gate. A control gate is formed on the dielectric film.</p> |
