Methods of low temperature oxidation

摘要

A method for forming a dielectric is provided. The method includes providing a substrate having a silicon-containing semiconductor layer within a process chamber. The process chamber is capable of ionizing a process precursor to a plasma comprising an oxygen-containing element and a fluorocarbon-containing element. A surface portion of the silicon-containing material is oxidized by using the plasma to convert the surface portion into an oxidized dielectric material.