发明名称 |
Non-volatile memory devices and methods of forming the same |
摘要 |
A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.
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申请公布号 |
US7723188(B2) |
申请公布日期 |
2010.05.25 |
申请号 |
US20080274166 |
申请日期 |
2008.11.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SEONG-GYUN;PARK JI-HOON;KANG SANG-WOO;PARK SUNG-WOO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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