| 摘要 |
PURPOSE: A flip-chip type nitride semiconductor light emitting diode is provided to improve the luminance characteristic by adopting an electrode structure having an n-electrode inserted into a p-electrode as a H-shape. CONSTITUTION: In a flip-chip type nitride semiconductor light emitting diode, a light-transmissive substrate is offered to grow the nitride single crystal. An n-type nitride semiconductor layer(111) is formed on the light-transmissive substrate. An active layer is formed on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer. The p electrode(120) is formed on the p-type nitride semiconductor layer. The n electrode(122) is formed on the -type nitride semiconductor layer and is inserted into the p electrode as an H-shape.
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